2013/1 1 /20 ver.1 page 1 SPP6307 p-channel enhancement mode mosfet description applica t ions the SPP6307 is t h e p - channel enhancement m ode power field ef fect transisto rs are produced using high cell density , d m os trench technolog y . this high densit y process is especi ally tailored to minim i ze on-state resistance an d provi de superior switching perform ance. these devic e s are particu l arly suited for low voltage applications such as noteboo k co m puter power management and other battery powered circuits where high-side s w itching , low in-line power los s , and resistanc e to transients are needed. ? drivers : rel a y s /solenoi ds/lam ps/hammers ? power suppl y converter circuits ? load/power switching cell phones, pa gers fea t ures pin configura t ion( sot - 363 ) ? p-channel -20v/0.45a, r ds(o n) = 0.65 ? @v gs =-4.5v -20v/0.35a, r ds(o n) = 0.90 ? @v gs =-2.5v -20v/0.25a, r ds(o n) = 1.5 ? @v gs =-1.8v ? super hig h de nsity cell design for extremely l o w rds (on) ? exceptional on-resistanc e a nd m a xi m u m dc current capab ility ? sot - 363 package design par t m a r k i n g http://
2013/1 1 /20 ver.1 page 2 SPP6307 p-channel enhancement mode mosfet pin description pin symbol description 1 s1 source 1 2 g1 gate 1 3 d2 drain 2 4 s2 source 2 5 g2 gate 2 6 d1 drain1 o r der i n g i n fo rma t i o n part numbe r package part marking SPP6307s36rgb sot-363 07 spp107 3s72 rgb : t a pe reel ; pb ? free, halogen ? fre absoul te maximum ra tings (t a =25 unless otherwis e no ted) parameter symbol t y pical unit drain-source voltage v dss -30 v gate ?source voltage v gss 12 v continuo us drain current(t j =150 ) t a =25 i d -0.45 a t a =80 -0.35 pulsed drain current i dm -1.0 a continuous source current(diode conduction) i s -0.3 a power dissip a tion t a =25 p d 0.27 w t a =70 0.16 operating junction temperature t j -55/150 storage temperature range t stg -55/150
2013/1 1 /20 ver.1 page 3 SPP6307 p-channel enhancement mode mosfet elect r ical characteristics (t a =25 unless otherwis e noted) parameter symbol conditions min. t y p max. unit static drain-source breakdown v o ltage v (br)ds s v gs =0 v , i d =-250ua -30 v gate threshold v o ltage v gs(th) v ds =v gs ,i d =-250ua -0.35 -1.0 gate le akage current i gss v ds =0 v , v gs = 12v 30 ua zero gate v o ltage drain current i dss v ds =-24v ,v gs =0v -1 ua v ds =-24v ,v gs =0v t j =55 -5 on-s tate drai n current i d( on) v ds -4.5v , v gs =-5v -0.7 a drain-source on-resist ance r ds( on) v gs =-4.5v ,i d =-0.45a 0.65 ? v gs =-2.5v,i d =-0.35a 0.90 v gs =-1.8v,i d =-0.25a 1.50 forward t r an sconductance gfs v ds =-10v ,i d =-0.25a 0.4 s diode forward voltage v sd i s =-0.15a,v gs =0v -0.8 -1.2 v dynamic t o tal gate char ge q g v ds =-10v ,v gs =-4.5v ,i d -0.6a 1.5 2.0 nc gate-source char ge q gs 0.3 gate-drain char ge q gd 0.35 t u rn-on t i me t d( on) v dd =-10v ,r l =10 ? , i d -0.4a v gen =-4.5v ,r g =6 ? 5 10 ns t r 15 25 t u rn-of f t i me t d(off) 8 15 t f 1.4 1.8
2013/1 1 /20 ver.1 page 4 SPP6307 p-channel enhancement mode mosfet typic a l cha rac t e risti c s
2013/1 1 /20 ver.1 page 5 SPP6307 p-channel enhancement mode mosfet typic a l cha rac t e risti c s
2013/1 1 /20 ver.1 page 6 SPP6307 p-channel enhancement mode mosfet typic a l cha rac t e risti c s sot - 363 p a ckage outline
2013/1 1 /20 ver.1 page 7 SPP6307 p-channel enhancement mode mosfet
2013/1 1 /20 ver.1 page 8 SPP6307 p-channel enhancement mode mosfet inform atio n p r o v i d e d is alleged to b e ex act an d con s istent. sync power c o rpo r atio n p r esu m es n o respo n sib ility fo r t h e p e n a lties o f u s e of su ch informatio n or fo r an y v i o l atio n o f p a ten t s or o t her righ ts of t h ird p a rties wh ich m a y resu lt from i t s use . no licen se is gran ted b y allegatio n or o t h e rwise u n d e r any p a te n t or p a t e n t ri gh ts o f sync power co rpo r ation . c o nd itio ns mentioned in t h is publication ar e s u bject t o cha n ge without notice. t h is p ublication surpasse s a n d replaces all inform ation pre v i o usl y s u p p l i e d. sy nc p o we r c o r p o r at i o n p r od uct s are not a u t h ori z e d fo r use as c r i t i cal co m ponent s i n l i fe s u pp ort d e v i ces or syst e m s with ou t exp r ess written ap pro v a l o f sync power c o rp oration . ?the s ync p o we r l o g o i s a regi st ere d t r a d em ark of sy n c po wer c o rp orat i o n ?2 00 4 sy nc po wer c o rp ora t i on ? p r i n t e d i n t a i w a n ? al l r i ght s r e se rve d syn c pow e r co rp or ation 7f -2, no.3-1, par k s t reet n a nk an g d i strict ( n k s p) , t a ip ei, t a iw an 1 15 pho n e : 88 6-2 - 2 655 -81 78 fax : 8 86- 2- 265 5-8 468 ?h ttp ://www .syn cpo w er .co m
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